LITHIUM-DOPED GALLIUM ARSENIDE TUNNEL DIODES

被引：7
|
作者：
EPSTEIN, AS
CALDWELL, JF
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1964年 / 35卷 / 10期
关键词：
D O I：
10.1063/1.1713161
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3050 / &
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