GALLIUM ARSENIDE AVALANCHE S-DIODES.

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作者：

Khludhov, S.S. ^{[1
]}

机构：

[1] V. D. Kuznetsov Siberian Physico-Technical Institute, Tomsk State University, Sux

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| 1600年 / 26期

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[1] EFFECT OF DISLOCATIONS ON THE ELECTRICAL CHARACTERISTICS OF GALLIUM ARSENIDE S-DIODES.
Khludkov, S.S.
Tarasova, L.K.
Lakhtikova, V.G.
Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika), 1974, 19 (09): : 69 - 74
[2] NOISE IN GALLIUM-ARSENIDE AVALANCHE READ DIODES
STATZ, H
PUCEL, RA
SIMPSON, JE
HAUS, HA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (09) : 1075 - 1085
[3] HIGH-EFFICIENCY GALLIUM ARSENIDE AVALANCHE DIODES
ARMSTRON.LD
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (06) : 423 - &
[4] INTERVALLEY SCATTERING IN GALLIUM-ARSENIDE AVALANCHE-DIODES
CULSHAW, B
BLAKEY, PA
PROCEEDINGS OF THE IEEE, 1976, 64 (04) : 569 - 571
[5] A THEORY FOR HIGH-EFFICIENCY OSCILLATIONS IN GALLIUM ARSENIDE AVALANCHE DIODES
COTTAM, MG
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (07) : 1033 - +
[6] HIGH-EFFICIENCY OSCILLATIONS IN GALLIUM-ARSENIDE AVALANCHE DIODES
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ELECTRONICS LETTERS, 1970, 6 (03) : 71 - +
[7] EQUAL-AREAS RULE FOR GALLIUM-ARSENIDE AVALANCHE-DIODES
CARROLL, JE
CULSHAW, B
GIBLIN, RA
ELECTRONICS LETTERS, 1975, 11 (15) : 316 - 318
[8] PHYSICS OF HIGH-EFFICIENCY GALLIUM-ARSENIDE AVALANCHE-DIODES
CULSHAW, B
BLAKEY, PA
GIBLIN, RA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1066 - 1066
[9] CHARGE-LIMITED DOMAINS IN GALLIUM-ARSENIDE AVALANCHE-DIODES
CULSHAW, B
BLAKEY, PA
GIBLIN, RA
ELECTRONICS LETTERS, 1975, 11 (05) : 102 - 104
[10] OBSERVATION OF LOW-FREQUENCY OSCILLATIONS IN GALLIUM-ARSENIDE AVALANCHE DIODES
AUCHTERLONIE, LJ
EDDOLLS, DV
WHITE, PM
ELECTRONICS LETTERS, 1970, 6 (05) : 140 - +

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