共 50 条
- [41] PHOTOELECTROCHEMICAL CORROSION OF N-GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C371 - C371
- [42] OSCILLATIONS OF THE TUNNELING CONDUCTANCE OF A SCHOTTKY-BARRIER N-GAAS(TE)/AU JUNCTION [J]. ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1992, 102 (05): : 1553 - 1562
- [43] MAGNETORESISTANCE AND HALL-EFFECT OF WARM AND NONEQUILIBRIUM ELECTRONS IN HIGH-PURITY N-GAAS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1994, 144 (02): : 377 - 382
- [44] EFFECT OF UNIAXIAL STRESS ON MAGNETOPHONON OSCILLATIONS IN LONGITUDINAL MAGNETORESISTANCE OF N-INSB [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (03): : 281 - &
- [45] Improvement in electrical properties at an n-GaAs/n-GaAs regrown interface using ammonium sulfide treatment [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (01): : 10 - 14
- [47] PHOTOELECTROCHEMISTRY OF N-GAAS - MECHANISM OF REDUCTION OF HEXACYANOFERRATE(III) AT AN N-GAAS ELECTRODE IN AQUEOUS-SOLUTION [J]. BULLETIN DE LA SOCIETE CHIMIQUE DE FRANCE PARTIE I-PHYSICOCHIMIE DES SYSTEMES LIQUIDES ELECTROCHIMIE CATALYSE GENIE CHIMIQUE, 1983, (9-10): : 233 - 235
- [48] Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 87 (02): : 141 - 147
- [49] A novel resonance in n-GaAs diodes [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (11): : 6675 - 6676
- [50] PHOTOCHEMICAL ETCHING OF N-GAAS IN HYDROXIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) : 1241 - 1242