OSCILLATIONS OF THE TUNNELING CONDUCTANCE OF A SCHOTTKY-BARRIER N-GAAS(TE)/AU JUNCTION

During lighting a tunnel n-GaAs(Te)/Au junction with free electron concentration n=(7 divided-by 9).10(18) cm-3 by means of GaP-based lightdiode at T=77 K the appearance of the tunneling conductance oscillations as a function of the applied bias voltage is observed with the characteristic period of greater-than-or-equal-to 40 mV and amplitude less then 1%. Oscillations are conserved for a long time after the of lighting is turned off. On the basis of the data recently obtained for the influence of the DX-center occupations on tunneling in the Schottky barrier junctions under pressure the general shape of oscillations and the character of their pressure dependence are qualitatively explained as a result of perturbation of the space charge region due to photoexcitation of DX-centers in GaAs.