OSCILLATIONS OF THE TUNNELING CONDUCTANCE OF A SCHOTTKY-BARRIER N-GAAS(TE)/AU JUNCTION

被引：0

作者：

DIZHUR, EM ^{[1
]}

VORONOVSKII, AN ^{[1
]}

ITSKEVICH, ES ^{[1
]}

KOTELNIKOV, IN ^{[1
]}

SHULMAN, AY ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST RADIOENGN & ELECTR,MOSCOW,RUSSIA

来源：

ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI | 1992年 / 102卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

During lighting a tunnel n-GaAs(Te)/Au junction with free electron concentration n=(7 divided-by 9).10(18) cm-3 by means of GaP-based lightdiode at T=77 K the appearance of the tunneling conductance oscillations as a function of the applied bias voltage is observed with the characteristic period of greater-than-or-equal-to 40 mV and amplitude less then 1%. Oscillations are conserved for a long time after the of lighting is turned off. On the basis of the data recently obtained for the influence of the DX-center occupations on tunneling in the Schottky barrier junctions under pressure the general shape of oscillations and the character of their pressure dependence are qualitatively explained as a result of perturbation of the space charge region due to photoexcitation of DX-centers in GaAs.

引用

页码：1553 / 1562

页数：10

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