AMBIPOLAR FIELD-EFFECT TRANSISTOR

被引：17
|
作者：
PFLEIDERER, H
KUSIAN, W
机构：
[1] Siemens AG, Research Lab, Munich,, West Ger, Siemens AG, Research Lab, Munich, West Ger
来源：
SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 03期
关键词：
ELECTRIC MEASUREMENTS;
D O I：
10.1016/0038-1101(86)90210-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The results of measurements performed on an amorphous-silicon thin-film transistor structure are presented and interpreted. The device characteristics show a continuous alternation between n-channel and p-channel operation, an 'ambipolar' effect that is made possible by the provision of ohmic source and drain contacts.
引用
收藏
页码：317 / 319
页数：3
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