MOSFET MOBILITY DEGRADATION DUE TO INTERFACE-STATES, GENERATED BY FOWLER-NORDHEIM ELECTRON INJECTION

被引：4
|
作者：
DEJENFELT, AT
ENGSTROM, O
机构：
[1] Department of Solid State Electronics, Chalmers University of Technology
来源：
MICROELECTRONIC ENGINEERING | 1991年 / 15卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(91)90265-F
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The degradation of the MOSFET inversion channel mobility due to generated interface-states was studied, generating the interface-states by Fowler-Nordheim injection. The inversion channel carrier mobility was directly related to the interface-state density and was not affected by the generated oxide charge. The mobility degradation due to the interface-states was in agreement with previous degradation data based on fixed interface charge by Sun and Plummer [1], provided the mobility was measured at the point of maximum transconductance, and only the charged fraction of the total interface-state spectrum under strong inversion conditions was included in the mobility model.
引用
收藏
页码：461 / 464
页数：4
相关论文
共 50 条
  • [1] PARASITIC MOSFET DEGRADATION INDUCED BY FOWLER-NORDHEIM INJECTION
    KATO, M
    NISHIOKA, Y
    OKABE, T
    [J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (12) : 590 - 592
  • [2] Mosfet parameter degradation after Fowler-Nordheim injection stress
    Candelori, A
    Gomiero, E
    Ghidini, G
    Paccagnella, A
    [J]. MICROELECTRONICS AND RELIABILITY, 1998, 38 (02): : 189 - 193
  • [3] MOSFET Degradation Under DC and RF Fowler-Nordheim Stress
    Cattaneo, A.
    Pinarello, S.
    Mueller, J-E
    Weigel, R.
    [J]. PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014), 2014, : 230 - 233
  • [4] EFFECT OF NEWLY GENERATED INTERFACE TRAPS ON FOWLER-NORDHEIM VOLTAGE SHIFT
    TAN, CH
    XU, MZ
    WANG, YY
    [J]. CHINESE PHYSICS, 1990, 10 (03): : 799 - 806
  • [5] (100)Si/SiO2 interface states above midgap induced by Fowler-Nordheim tunneling electron injection
    Inoue, M
    Shirafuji, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (11) : 6315 - 6321
  • [6] Relation between MOSFET degradation and interface-states generation
    Guenifi, N
    Djahli, F
    Mayouf, A
    [J]. ICECS 2000: 7TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS & SYSTEMS, VOLS I AND II, 2000, : 936 - 939
  • [7] DEGRADATION OF METAL-OXIDE SEMICONDUCTOR STRUCTURES BY FOWLER-NORDHEIM TUNNELING INJECTION
    BALLAND, B
    PLOSSU, C
    BARDY, S
    [J]. THIN SOLID FILMS, 1987, 148 (02) : 149 - 162
  • [8] Radio frequency plasma annealing of positive charge generated by Fowler-Nordheim electron injection in buried oxides in silicon
    Nazarov, AN
    Kilchytska, VI
    Barchuk, IP
    Tkachenko, AS
    Ashok, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03): : 1254 - 1261
  • [9] HYDROGENATION OF BORON ACCEPTOR IN SILICON DURING ELECTRON INJECTION BY FOWLER-NORDHEIM TUNNELING
    CHAO, CYP
    LUO, MSC
    PAN, SCS
    SAH, CT
    [J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 180 - 181
  • [10] Methods to determine electron traps created in gate oxides by Fowler-Nordheim injection
    Auriel, G
    Dubuc, JP
    Sagnes, B
    Oualid, J
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1997, 220 (2-3) : 157 - 163
12345