A NEUTRON DAMAGE STUDY OF LIQUID-PHASE EPITAXIAL GAAS AND HIGH-PURITY SILICON

被引：4

作者：

BUTCHER, KSA ^{[1
]}

ALEXIEV, D ^{[1
]}

BOLDEMAN, JW ^{[1
]}

机构：

[1] AUSTRALIAN NUCL SCI & TECHNOL ORG,MENAI,NSW 2234,AUSTRALIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 95卷 / 03期

关键词：

D O I：

10.1016/0168-583X(94)00467-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Neutron irradiation studies of silicon and liquid phase epitaxial (LPE) GaAs Schottky barrier radiation detectors were carried out using 1.1 MeV fast neutrons produced using the Australian Nuclear Science and Technology Organisation's 3 MeV Van de Graaff accelerator. Neutrons were provided by bombardment of a Li-7 target with 3 MeV protons to a maximum fluence of 7 X 10(13) neutrons cm(-2). Neutron damage to the detectors was characterised using capacitive deep level transient spectroscopy, optical deep level transient conductance spectroscopy, current-voltage measurements and capacitance-voltage measurements. The degradation of Am-241 spectra was also observed.

引用

页码：355 / 370

页数：16

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