LIQUID-PHASE EPITAXIAL REFILL OF SILICON GROOVES

被引：0

作者：

BALIGA, BJ ^{[1
]}

机构：

[1] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

下载

页码：C370 / C370

页数：1

共 50 条

[1] REFILLING SILICON GROOVES BY LIQUID-PHASE EPITAXY
BALIGA, BJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2819 - 2823
[2] MORPHOLOGY OF EPITAXIAL SILICON LAYERS, OBTAINED BY LIQUID-PHASE EPITAXY
KOZHITOV, LV
VOLKOV, MP
RJAZANOV, SV
KRISTALLOGRAFIYA, 1986, 31 (06): : 1185 - 1188
[3] LIQUID-PHASE EPITAXIAL-GROWTH OF SILICON IN SELECTED AREAS
KIM, HJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1394 - &
[4] LIQUID-PHASE EPITAXIAL-GROWTH OF SILICON FROM A TIN MELT
BALIGA, BJ
GIDLEY, G
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C106 - C106
[5] THE GROWTH AND PROPERTIES OF LIQUID-PHASE EPITAXIAL SILICON IN A FORMING GAS AMBIENT
SHI, Z
ZHANG, W
ZHENG, GF
KURIANSKI, J
GREEN, MA
BERGMANN, R
JOURNAL OF CRYSTAL GROWTH, 1995, 151 (3-4) : 278 - 284
[6] LIQUID-PHASE EPITAXIAL-GROWTH OF GALLIUM-DOPED SILICON
SUMNER, BE
FOLEY, RT
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (11) : 1817 - 1824
[7] DOPANT DISTRIBUTION IN SILICON LIQUID-PHASE EPITAXIAL LAYERS - MELTBACK EFFECTS
BALIGA, BJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) : 138 - 143
[8] VERY-LOW-TEMPERATURE LIQUID-PHASE EPITAXIAL-GROWTH OF SILICON
LEE, SH
HEALY, SA
YOUNG, TL
GREEN, MA
MATERIALS LETTERS, 1990, 9 (2-3) : 53 - 56
[9] LIQUID-PHASE EPITAXIAL SILICON DIODES - N-EPITAXIAL LAYERS ON BORON-DOPED SUBSTRATES
BALIGA, BJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (05) : 1168 - 1172
[10] A NEUTRON DAMAGE STUDY OF LIQUID-PHASE EPITAXIAL GAAS AND HIGH-PURITY SILICON
BUTCHER, KSA
ALEXIEV, D
BOLDEMAN, JW
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 95 (03): : 355 - 370

← 1 2 3 4 5 →