METAL MULTILAYERS FOR DEVICES HAVING MICROWAVE BIPOLAR-TRANSISTORS

被引:0
|
作者
PESTIE, JP [1 ]
机构
[1] COMPAGNIE GEN ELECTR,CTR RECH,LAB MARCOUSSIS,ROUTE NOZAY,F-91460 MARCOUSSIS,FRANCE
来源
ANNALES DE CHIMIE FRANCE | 1975年 / 10卷 / 4-5期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:267 / 273
页数:7
相关论文
共 50 条
  • [1] DEGRADATION IN MICROWAVE BIPOLAR-TRANSISTORS
    MARSHALL, S
    [J]. SOLID STATE TECHNOLOGY, 1975, 18 (02) : 29 - 29
  • [2] DISTRIBUTED THEORY FOR MICROWAVE BIPOLAR-TRANSISTORS
    WAHL, AJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) : 40 - 49
  • [3] MICROWAVE INTERFERENCE EFFECT IN BIPOLAR-TRANSISTORS
    RICHARDSON, RE
    PUGLIELLI, VG
    AMADORI, RA
    [J]. IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, 1975, 17 (04) : 216 - 219
  • [4] LEAKAGE AND HFE DEGRADATION IN MICROWAVE BIPOLAR-TRANSISTORS
    WANG, ACM
    KAKIHANA, S
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (11) : 667 - 674
  • [5] NOISE MODELING OF MICROWAVE HETEROJUNCTION BIPOLAR-TRANSISTORS
    ESCOTTE, L
    ROUX, JP
    PLANA, R
    GRAFFEUIL, J
    GRUHLE, A
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (05) : 883 - 889
  • [6] GAAS BIPOLAR-TRANSISTORS FOR MICROWAVE AND DIGITAL CIRCUITS
    TOPHAM, PJ
    [J]. GEC JOURNAL OF RESEARCH, 1991, 9 (02): : 74 - 80
  • [7] METALLIZATION OF SUBMICRON MICROWAVE BIPOLAR-TRANSISTORS BY ELECTROPLATING
    WEBSTER, MN
    TUINHOUT, A
    LOCHEL, B
    VERBRUGGEN, AH
    ROMIJN, J
    VANDERDRIFT, E
    RADELAAR, S
    JOS, HFF
    MOORS, PMA
    [J]. MICROELECTRONIC ENGINEERING, 1994, 23 (1-4) : 441 - 444
  • [8] ALGORITHMS AND PROGRAMS OF SYNTHESIS FOR DIGITAL CIRCUITS HAVING BIPOLAR-TRANSISTORS
    PANFILOV, AP
    PETROV, AA
    SHAGURIN, II
    [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1981, 24 (06): : 47 - 53
  • [9] WIDEBAND REPEATERS ON BIPOLAR-TRANSISTORS AND METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
    DYAKONOV, VP
    STERLYAG.AA
    [J]. PRIBORY I TEKHNIKA EKSPERIMENTA, 1973, (06): : 99 - 100
  • [10] MICROWAVE NOISE PERFORMANCE OF INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS
    CHEN, YK
    NOTTENBURG, RN
    PANISH, MB
    HAMM, RA
    HUMPHREY, DA
    [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) : 470 - 472