NOISE MODELING OF MICROWAVE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：57

作者：

ESCOTTE, L ^{[1
]}

ROUX, JP ^{[1
]}

PLANA, R ^{[1
]}

GRAFFEUIL, J ^{[1
]}

GRUHLE, A ^{[1
]}

机构：

[1] DAIMLER BENZ AG,RES CTR ULM,D-89081 ULM,GERMANY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 05期

关键词：

D O I：

10.1109/16.381984

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Analytical expressions of microwave heterojunction bipolar transistors minimum noise figure and noise parameter are reported in this paper. These expressions are derived from a noise model including nonideal junctions, emitter and base resistances and have been compared with measured data obtained on a Si/SiGe HBT. An agreement between theoretical and experimental data was observed up to 20 GHz for several bias conditions. The limits of the model or the range of validity of the proposed equations have been also examined with the help of an appropriate CAD software. The analysis of the influence of parasitic elements on noise parameters has shown a strong influence of the extrinsic base collector capacitance at microwave frequencies.

引用

页码：883 / 889

页数：7

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