UNIFORMITY OF SILICON STRUCTURES BY MEANS OF THE PHOTO-VOLTAGE

被引：0

|

作者：

PATRIN, AA

SERNOV, SP

机构：

来源：

SOVIET MICROELECTRONICS | 1982年 / 11卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：238 / 241

页数：4

相关论文

共 50 条

[21] ELECTRONIC CHARACTERIZATION OF HETERO-EPITAXIAL SILICON-ON-SAPPHIRE BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY
LAGOWSKI, J
JASTRZEBSKI, L
CULLEN, GW
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C393 - C393
[22] USE OF PHOTO-VOLTAGE FOR ELECTRODEPOSITION ON SOLAR-CELLS
JAIN, VK
KULSHRESHTHA, AP
INDIAN JOURNAL OF TECHNOLOGY, 1982, 20 (09): : 373 - 375
[23] ELECTRON-BEAM ENHANCED SURFACE PHOTO-VOLTAGE
MUNAKATA, C
OKAZAKI, S
YAGI, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L555 - L557
[24] PHOTO-VOLTAGE INDUCED BY CAPTURE OF PHOTO-CARRIERS BY SURFACE TRAPS
BUIMISTR.VM
GORBAN, AP
LITOVCHE.VG
SURFACE SCIENCE, 1965, 3 (05) : 445 - &
[25] MICROSCALE CHARACTERIZATION OF HETERO-EPITAXIAL SILICON-ON-SAPPHIRE BY SCANNING PHOTO-VOLTAGE MEASUREMENTS
JASTRZEBSKI, L
CULLEN, GW
LAGOWSKI, J
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C101 - C101
[26] THE SURFACE PHOTO-VOLTAGE OF POLYMETHINE SEMICONDUCTING-FILMS
MUSSER, ME
DAHLBERG, SC
JOURNAL OF CHEMICAL PHYSICS, 1980, 72 (07): : 4084 - 4088
[27] PHOTO-VOLTAGE STUDIES OF ALUMINUM-PHTHALOCYANINE INTERFACES
MURTI, DK
BRILLSON, LJ
SLOWIK, JH
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02): : 233 - 236
[28] PHOTO-VOLTAGE AT METAL-CDS SCHOTTKY CONTACT
BUTENDEICH, R
RUPPEL, W
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1978, 49 (01): : 169 - 175
[29] NONEQUILIBRIUM SURFACE-STATE PROPERTIES AT CLEAN CLEAVED SILICON SURFACE AS MEASURED BY SURFACE PHOTO-VOLTAGE
KUHLMANN, W
HENZLER, M
SURFACE SCIENCE, 1980, 99 (01) : 45 - 58
[30] THE EFFECT OF SURFACE-POTENTIAL FLUCTUATIONS ON SURFACE PHOTO-VOLTAGE IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES
KRAWCZYK, SK
JAKUBOWSKI, A
JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5399 - 5400

← 1 2 3 4 5 →