NEAR BALLISTIC TRANSPORT IN A NONPARABOLIC-BAND STRUCTURE FOR N-GAAS AND P-GAAS

被引：7
|
作者：
LEE, J
SU, CB
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 05期
关键词：
D O I：
10.1109/T-ED.1982.20805
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：933 / 935
页数：3
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