PHOTOLUMINESCENCE DETECTION OF IMPURITIES INTRODUCED IN SILICON BY DRY ETCHING PROCESSES

被引：19

|

作者：

WEBER, J

DAVIS, RJ

HABERMEIER, HU

SAWYER, WD

SINGH, M

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 41卷 / 03期

关键词：

D O I：

10.1007/BF00616836

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：175 / 178

页数：4

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