PHOTOLUMINESCENCE DETECTION OF IMPURITIES INTRODUCED IN SILICON BY DRY ETCHING PROCESSES

被引：19
|
作者：
WEBER, J
DAVIS, RJ
HABERMEIER, HU
SAWYER, WD
SINGH, M
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 41卷 / 03期
关键词：
D O I：
10.1007/BF00616836
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：175 / 178
页数：4
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