INJECTION SEPARATE-CONFINEMENT INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS WITH A THRESHOLD 300 A/CM2 (SAMPLES CLEAVED ALONG 4 SIDES, LAMBDA=1.25-MU, T=300-K)

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作者：

ALFEROV, ZI

ARSENTEV, IN

GARBUZOV, DZ

EVTIKHIEV, VP

SULIMA, OV

CHALYI, VP

CHUDINOV, AV

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1984年 / 18卷 / 11期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：1281 / 1283

页数：3

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[1] QUANTUM-WELL SEPARATE-CONFINEMENT INGAASP GAAS DOUBLE-HETEROSTRUCTURE LASER PREPARED BY LIQUID EPITAXY (LAMBDA=0.79-MU,ITH=124 A/CM2, T=300-K)
ALFEROV, ZI
ANTONISHKIS, NY
ARSENTEV, IN
GARBUZOV, DZ
KRASOVSKII, VV
TIKUNOV, AV
KHALFIN, VB
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (01): : 98 - 100
[2] LOW-THRESHOLD QUANTUM-WELL INGAASP/GAAS SEPARATE-CONFINEMENT DOUBLE HETEROSTRUCTURE LASERS FORMED BY THE LIQUID EPITAXY METHOD (LAMBDA= 0.86MU,TH=90 A/CM2,L=INFINITY TH=165 A/CM2,L=1150-MU,T=300-K)
ALFEROV, ZI
ANTONISHKIS, NY
ARSENTEV, IN
GARBUZOV, DZ
TIKUNOV, AV
KHALFIN, VB
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (08): : 914 - 915
[3] QUANTUM-WELL INGAASP/INP SEPARATE-CONFINEMENT DOUBLE HETEROSTRUCTURE LASERS EMITTING AT LAMBDA=1.3 MU (JTH=410 A/CM2, T= 23-DEGREES-C)
ALFEROV, ZI
GARBUZOV, DZ
ZAITSEV, SV
NIVIN, AB
OVCHINNIKOV, AV
TARASOV, IS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (05): : 503 - 506
[4] LOW-THRESHOLD (JTH=230 A/CM2, T=300 K) ALGAAS DOUBLE-HETEROSTRUCTURE SEPARATE-CONFINEMENT LASERS FORMED BY LIQUID-PHASE EPITAXY
ALFEROV, ZI
ANDREEV, VM
VODNEV, AA
IVENTEVA, OO
LARIONOV, VR
RUMYANTSEV, VD
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (02): : 239 - 240
[5] LOW-THRESHOLD INJECTION INGAASP/GAAS DOUBLE HETEROSTRUCTURE LASERS WITH SEPARATE CONFINEMENT, FABRICATED BY LIQUID-PHASE EPITAXY (LAMBDA=0.78-0.87-MU,LTH=460A/CM2,T=300K)
ALFEROV, ZI
ARSENTEV, IN
VAVILOVA, LS
GARBUZOV, DZ
KRASOVSKII, VV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (09): : 1035 - 1037
[6] CONTINUOUS-WAVE SEPARATE-CONFINEMENT INGAASP/GAAS DOUBLE HETEROSTRUCTURE 77-MW (T=300-K,LAMBDA=0.87MU) LASER GROWN BY LIQUID EPITAXY
GARBUZOV, DZ
ARSENTEV, IN
VAVILOVA, LS
TIKUNOV, AV
TULASHVILI, EV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (01): : 83 - 84
[7] CONTINUOUS-WAVE INJECTION-LASER WITH AN OUTPUT POWER OF 60 MW (LAMBDA=1.35-MU,T=300-K), BASED ON A SEPARATE-CONFINEMENT INGAASP DOUBLE HETEROSTRUCTURE FORMED BY LIQUID EPITAXY
ALFEROV, ZI
GARBUZOV, DZ
NIVIN, AB
OVCHINNIKOV, AV
TARASOV, IS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (03): : 284 - 286
[8] SEPARATE-CONFINEMENT ALGAAS/GAAS HETEROLASERS OBTAINED BY THE MODIFIED METHOD OF LIQUID EPITAXY (IN,260 A/CM2, LAMBDA=0.86-0.83-MU-M, T=300-K)
ALFEROV, ZI
GARBUZOV, DZ
KRASOVSKII, VV
NIKISHIN, SA
SINYAVSKII, DV
TIKUNOV, AV
[J]. PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1985, 11 (23): : 1409 - 1413
[9] INFLUENCE OF THE LUMINESCENCE SATURATION EFFECT ON THE LASING THRESHOLD OF INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS (LAMBDA=1.3-MU) AT T GREATER-THAN-OR-EQUAL-TO 300-K
GARBUZOV, DZ
CHALYI, VP
AGAEV, VV
TRUKAN, MK
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (03): : 338 - 339
[10] INGAASP/INP INJECTION-LASERS WITH THE THRESHOLD CURRENT-DENSITY OF 0.5 KA/CM2 AT 300 K
DOLGINOV, LM
DRAKIN, AE
ELISEEV, PG
SVERDLOV, BN
SKRIPKIN, VA
SHEVCHENKO, EG
[J]. KVANTOVAYA ELEKTRONIKA, 1984, 11 (04): : 645 - 646