QUANTUM-WELL SEPARATE-CONFINEMENT INGAASP GAAS DOUBLE-HETEROSTRUCTURE LASER PREPARED BY LIQUID EPITAXY (LAMBDA=0.79-MU,ITH=124 A/CM2, T=300-K)

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作者：

ALFEROV, ZI

ANTONISHKIS, NY

ARSENTEV, IN

GARBUZOV, DZ

KRASOVSKII, VV

TIKUNOV, AV

KHALFIN, VB

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 01期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：98 / 100

页数：3

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ARSENTEV, IN
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (08): : 914 - 915
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (01): : 83 - 84
[3] INJECTION SEPARATE-CONFINEMENT INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS WITH A THRESHOLD 300 A/CM2 (SAMPLES CLEAVED ALONG 4 SIDES, LAMBDA=1.25-MU, T=300-K)
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ARSENTEV, IN
GARBUZOV, DZ
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SULIMA, OV
CHALYI, VP
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (11): : 1281 - 1283
[4] SEPARATE-CONFINEMENT ALGAAS/GAAS HETEROLASERS OBTAINED BY THE MODIFIED METHOD OF LIQUID EPITAXY (IN,260 A/CM2, LAMBDA=0.86-0.83-MU-M, T=300-K)
ALFEROV, ZI
GARBUZOV, DZ
KRASOVSKII, VV
NIKISHIN, SA
SINYAVSKII, DV
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[J]. PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1985, 11 (23): : 1409 - 1413
[5] QUANTUM-WELL INGAASP/INP SEPARATE-CONFINEMENT DOUBLE HETEROSTRUCTURE LASERS EMITTING AT LAMBDA=1.3 MU (JTH=410 A/CM2, T= 23-DEGREES-C)
ALFEROV, ZI
GARBUZOV, DZ
ZAITSEV, SV
NIVIN, AB
OVCHINNIKOV, AV
TARASOV, IS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (05): : 503 - 506
[6] QUANTUM-WELL SEPARATE-CONFINEMENT INGAASP GAAS (LAMBDA=0.86-0.78-MU-M) LASER (JTH=100 A/CM2, EFFICIENCY 59-PERCENT)
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (06): : 650 - 652
[7] LOW-THRESHOLD (JTH=230 A/CM2, T=300 K) ALGAAS DOUBLE-HETEROSTRUCTURE SEPARATE-CONFINEMENT LASERS FORMED BY LIQUID-PHASE EPITAXY
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (02): : 239 - 240
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (03): : 284 - 286
[9] DOUBLE-HETEROSTRUCTURE SEPARATE-CONFINEMENT (AL, GA)AS LASERS EMITTING AT 0.8 MU-M (175 A/CM2) AND 0.73 MU-M (350 A/CM2) AND CHARACTERIZED BY A DOPED QUANTUM-WELL
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IVANOV, SV
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (01): : 122 - 123
[10] LOW-THRESHOLD INJECTION INGAASP/GAAS DOUBLE HETEROSTRUCTURE LASERS WITH SEPARATE CONFINEMENT, FABRICATED BY LIQUID-PHASE EPITAXY (LAMBDA=0.78-0.87-MU,LTH=460A/CM2,T=300K)
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (09): : 1035 - 1037