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- [1] SPECIAL FEATURES OF THE THRESHOLD CHARACTERISTICS OF SEPARATELY CONFINED INGAASP/INP DOUBLE-HETEROSTRUCTURE LASERS (LAMBDA-=1.3-MU) WITH ULTRATHIN ACTIVE REGIONSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (08): : 873 - 875EVTIKHIEV, VPGARBUZOV, DZSOKOLOVA, ZNTARASOV, ISKHALFIN, VBCHALYI, VPCHUDINOV, AV
- [2] DOUBLE INP INGAASP (LAMBDA=1.3-MU) HETEROSTRUCTURES WITH AN EXTERNAL LUMINESCENCE QUANTUM EFFICIENCY OF - 40-PERCENT(300-DEGREES-K)SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (11): : 1326 - 1328AGAEV, VVGARBUZOV, DZGORELENOK, ATMDIVANI, VNCHALYI, VP
- [3] TEMPERATURE-DEPENDENCE OF THE LASING THRESHOLD OF INGAASP/GAAS DOUBLE HETEROSTRUCTURES (LAMBDA=729 NM, T GREATER-THAN-OR-EQUAL-TO 300 K, J TH GREATER-THAN-OR-EQUAL-TO 5X10(3) A/CM2)SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (05): : 527 - 529ARSENTEV, INVAVILOVA, LSGARBUZOV, DZTULASHVILI, EV
- [4] CHARACTERISTIC FEATURES OF THE TEMPERATURE DEPENDENCES OF THE THRESHOLD OF SEPARATE-CONFINEMENT INGAASP/INP DOUBLE-HETEROSTRUCTURE LASERS (LAMBDA-=1.3-MU) WITH THIN ACTIVE REGIONSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (08): : 920 - 921TARASOV, ISGARBUZOV, DZEVTIKHIEV, VPOVCHINNIKOV, AVSOKOLOVA, ZNCHUDINOV, AV
- [5] INJECTION SEPARATE-CONFINEMENT INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS WITH A THRESHOLD 300 A/CM2 (SAMPLES CLEAVED ALONG 4 SIDES, LAMBDA=1.25-MU, T=300-K)SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (11): : 1281 - 1283ALFEROV, ZIARSENTEV, INGARBUZOV, DZEVTIKHIEV, VPSULIMA, OVCHALYI, VPCHUDINOV, AV
- [6] EXPERIMENTAL AND THEORETICAL INVESTIGATIONS OF SINGULARITIES OF THE THRESHOLD AND POWER CHARACTERISTICS OF INGAASP/INP SEPARATE-CONFINEMENT DOUBLE-HETEROSTRUCTURE LASERS (LAMBDA = 1.3 MU-M)SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (05): : 560 - 564GARBUZOV, DZOVCHINNIKOV, AVPIKHTIN, NASOKOLOVA, ZNTARASOV, ISKHALFIN, VB
- [7] POWER SEPARATE CONFINEMENT INGAASP/INP-BASED LASERS FOR FOCD (LAMBDA=1,55 MU-M, T=300-K, P=50 MVT)PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 13 (09): : 535 - 537GARBUZOV, DZZAITSEV, SVILINSKAYA, NDKIZHAEV, KYNIVIN, ABOVCHINNIKOV, AVSTRUGOV, NATARASOV, IS
- [8] TEMPERATURE DEPENDENCE OF THE LASING THRESHOLD OF InGaAsP/GaAs DOUBLE HETEROSTRUCTURES ( lambda l equals 729 nm, T greater than equivalent to 300 K, Jth greater than equivalent to 5 multiplied by 103 A/cm2).Soviet physics. Semiconductors, 1983, 17 (05): : 527 - 529Arsent'ev, I.N.Vavilova, L.S.Garbuzov, D.Z.Tulashvili, E.V.
- [9] QUANTUM-WELL INGAASP/INP SEPARATE-CONFINEMENT DOUBLE HETEROSTRUCTURE LASERS EMITTING AT LAMBDA=1.3 MU (JTH=410 A/CM2, T= 23-DEGREES-C)SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (05): : 503 - 506ALFEROV, ZIGARBUZOV, DZZAITSEV, SVNIVIN, ABOVCHINNIKOV, AVTARASOV, IS
- [10] CONTINUOUS-WAVE SEPARATE-CONFINEMENT INGAASP/GAAS DOUBLE HETEROSTRUCTURE 77-MW (T=300-K,LAMBDA=0.87MU) LASER GROWN BY LIQUID EPITAXYSOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (01): : 83 - 84GARBUZOV, DZARSENTEV, INVAVILOVA, LSTIKUNOV, AVTULASHVILI, EV