RBS CHANNELING STUDY OF THE CRYSTALLOGRAPHIC CORRELATION FOR EPITAXIAL CEO2 ON SI

被引：6

作者：

YAMAMOTO, Y ^{[1
]}

SATOH, M ^{[1
]}

SAKURAI, Y ^{[1
]}

NAKAJIMA, S ^{[1
]}

INOUE, T ^{[1
]}

OHSUNA, T ^{[1
]}

机构：

[1] IWAKI MEISEI UNIV,COLL SCI & ENGN,DEPT ELECTR ENGN,IWAKI,FUKUSHIMA 970,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 4B期

关键词：

RUTHERFORD BACKSCATTERING; CHANNELING; CEO2; EPITAXY; STEREOGRAPHIC PROJECTION;

D O I：

10.1143/JJAP.32.L620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxially grown CeO2 layers on (100) Si substrates are analyzed using the Rutherford backscattering spectrometry combined with the channeling technique. By construction of stereographic projections for CeO2 layers and Si substrates from channeling dip patterns, the correlations between overgrown layers and substrates are clearly revealed: CeO2 layers on (100) Si substrates have the (110) orientation. It has also been revealed that CeO2 has a double domain structure: [001] CeO2 parallel-to [011BAR] Si and [110BAR] CeO2 parallel-to [011BAR] Si, whereas planes of (110) in CeO2 and (100) in Si are parallel in both configurations. It is reported that in this system the (110) epitaxial orientation is not exactly parallel to the (100) orientations in Si.

引用

页码：L620 / L623

页数：4

共 50 条

[31] Comment on:: "Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy"
Paparazzo, E
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01): : 296 - 298
[32] No heat assistance crystallinity improvement of epitaxial CeO2/Si by high energy ion irradiation
Satoh, M
Sone, L
Yamamoto, Y
Inoue, T
Kudo, H
ION BEAM MODIFICATION OF MATERIALS, 1996, : 1085 - 1088
[33] INTERMEDIATE AMORPHOUS LAYER FORMATION MECHANISM AT THE INTERFACE OF EPITAXIAL CEO2 LAYERS AND SI SUBSTRATES
INOUE, T
OHSUNA, T
OBARA, Y
YAMAMOTO, Y
SATOH, M
SAKURAI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (04): : 1765 - 1767
[34] Intermediate amorphous layer formation mechanism at the interface of epitaxial CeO2 layers and Si substrates
Inoue, Tomoyasu
Ohsuna, Tetsu
Obara, Yasuhiro
Yamamoto, Yasuhiro
Satoh, Masataka
Sakurai, Yoshinobu
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (04): : 1765 - 1767
[35] Effect of electron incidence in epitaxial growth of CeO2(110) layers on Si(100) substrates
Inoue, T
Yamamoto, Y
Satoh, M
EPITAXIAL OXIDE THIN FILMS III, 1997, 474 : 321 - 326
[36] RBS/channeling study of buried Ge quantum dots grown in a Si layer
Fonseca, A.
Alves, E.
Barradas, N. P.
Leitao, J. P.
Sobolev, N. A.
Carmo, M. C.
Nikiforov, A. I.
Presting, H.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 249 (462-465): : 462 - 465
[37] Structural and electrochemical properties of sol-gel derived Mo:CeO2, Si:Mo:CeO2 and Si:CeO2 nanocrystalline films for electrochromic devices
Stangar, UL
Opara, U
Orel, B
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 1997, 8 (1-3) : 751 - 758
[38] Structural and Electrochemical Properties of Sol-Gel Derived Mo : CeO2, Si : Mo : CeO2 and Si : CeO2 Nanocrystalline Films for Electrochromic Devices
U. Lavrenčič Štangar
U. Opara
B. Orel
Journal of Sol-Gel Science and Technology, 1997, 8 : 751 - 758
[39] Structural and electrochemical properties of sol-gel derived Mo:CeO2, Si:Mo:CeO2 and Si:CeO2 nanocrystalline films for electrochromic devices
U. Lavrenčič Štangar
U. Opara
B. Orel
Journal of Sol-Gel Science and Technology, 1997, 8 : 751 - 758
[40] EPITAXIAL-GROWTH OF CEO2 LAYERS ON SILICON
INOUE, T
YAMAMOTO, Y
KOYAMA, S
SUZUKI, S
UEDA, Y
APPLIED PHYSICS LETTERS, 1990, 56 (14) : 1332 - 1333

← 1 2 3 4 5 →