Comment on:: "Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy"

被引：3
|
作者：
Paparazzo, E
机构：
[1] CNR, Ist Struttura Mat, Area Ric Roma Tor Vergata, I-00133 Rome, Italy
[2] CNR, ICFAM, Area Ric Genova, I-16149 Genoa, Italy
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 01期
关键词：
D O I：
10.1116/1.591187
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An article by Jones et al. [J. Vac. Sci. Technol. B 16, 2686 (1998)] on the epitaxial growth of Si/CeO2/Si(111) structures is commented upon. The area of major disagreement regards the interpretation that the authors propose to explain their x-ray photoemission spectroscopy (XPS) results, specifically the statement that Ce metal segregates to the surface of the overgrown silicon layer as a result of CeO2 decomposition. It is shown that the XPS results can be accounted-for only by assuming that Ce2O3-Like species, and not Ce metal, segregate to the surface. The surface chemistry of Ce-O-Si systems and some methodological aspects associated with their XPS analysis are discussed. (C) 2000 American Vacuum Society. [S0734-211X(00)07401-1].
引用
收藏
页码：296 / 298
页数：3
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