DUAL ARSENIC AND BORON ION-IMPLANTATION IN SILICON

被引：5
|
作者：
YOKOTA, K
OKAMOTO, Y
MIYASHITA, F
HIRAO, T
WATANABE, M
SEKINE, K
ANDO, Y
MATSUDA, K
机构：
[1] MATSUSHITA ELECT IND CO LTD,CENT RES LAB,MORIGUCHI,OSAKA 570,JAPAN
[2] ION ENGN RES INST CO,HIRAKATA,OSAKA 57301,JAPAN
[3] NISSHIN ELECT CO LTD,UKYO KU,KYOTO 615,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 11期
关键词：
D O I：
10.1063/1.356659
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Arsenic (As) and boron (B) ions were implanted into silicon (Si) at energies such that their projected ranges coincided. The implanted Si was annealed in argon gas at a temperature of 950-degrees-C for 30 or 300 min. The activation efficiency of the implanted As atoms decreased with an increase in the implant dose of the B ions, and the diffusivity of the As atoms decreased. On the other hand, the diffusivity of the B atoms decreased with an increase in annealing time.
引用
收藏
页码：7247 / 7251
页数：5
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