共 50 条
- [1] AMORPHIZATION OF SILICON BY ION-IMPLANTATION [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 408 - 408
- [2] SILICON AMORPHIZATION MODEL IN THE PROCESS OF ION-IMPLANTATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1990, 113 (04): : 277 - 281
- [4] SILICON AMORPHIZATION DURING ION-IMPLANTATION AS A THERMAL PHENOMENON [J]. PHYSICAL REVIEW B, 1987, 36 (10): : 5131 - 5137
- [5] ION-IMPLANTATION INDUCED ANOMALOUS SURFACE AMORPHIZATION IN SILICON [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 85 (1-4): : 335 - 339
- [6] AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04): : 219 - 225
- [8] AMORPHIZATION OF TELLURIUM BY ION-IMPLANTATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 199 (1-2): : 401 - 404
- [9] THE INFLUENCE OF ION-IMPLANTATION CONDITIONS ON DEFECT FORMATION AND AMORPHIZATION IN SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1994, 132 (01): : 11 - 18