GAAS/ALGAAS HETEROJUNCTION EMITTER-DOWN BIPOLAR CIRCUITS FABRICATED ON GAAS-ON-SI SUBSTRATES

被引：0
|
作者：
TRAN, LT [1 ]
MATYI, RJ [1 ]
SHICHIJO, H [1 ]
YUAN, HT [1 ]
LEE, JW [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 11期
关键词：
D O I：
10.1109/T-ED.1987.23279
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2369 / 2370
页数：2
相关论文
共 50 条
  • [1] GAAS/ALGAAS HETEROJUNCTION EMITTER-DOWN BIPOLAR CIRCUITS FABRICATED ON GAAS-ON-SI SUBSTRATES.
    Tran, L.T.
    Matyi, R.J.
    Shichijo, H.
    Yuan, H.T.
    Lee, J.W.
    1600, (ED-34):
  • [2] GaAs/AlGaAs HETEROJUNCTION EMITTER-DOWN BIPOLAR TRANSISTORS FABRICATED ON GaAs-ON-Si SUBSTRATE.
    Tran, L.T.
    Lee, J.W.
    Shichijo, Hisashi
    Yuan, Han-Tzong
    Electron device letters, 1987, EDL-8 (02): : 50 - 52
  • [3] GAAS/ALGAAS HETEROJUNCTION EMITTER-DOWN BIPOLAR-TRANSISTORS FABRICATED ON GAAS-ON-SI SUBSTRATE
    TRAN, LT
    LEE, JW
    SHICHIJO, H
    YUAN, HT
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) : 50 - 52
  • [4] ALGAAS/GAAS EMITTER-DOWN HBT FABRICATED BY MBE OVERGROWTH
    PLUMTON, DL
    SHIH, HD
    MORRIS, FJ
    ELECTRONICS LETTERS, 1989, 25 (18) : 1211 - 1212
  • [5] GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates
    Sengupta, DK
    Fang, W
    Malin, JI
    Li, J
    Horton, T
    Curtis, AP
    Hsieh, KC
    Chuang, SL
    Chen, H
    Feng, M
    Stillman, GE
    Li, L
    Liu, HC
    Bandara, KMSV
    Gunapala, SD
    Wang, WI
    APPLIED PHYSICS LETTERS, 1997, 71 (01) : 78 - 80
  • [6] High gain AlGaAs/GaAs heterojunction bipolar transistor fabricated on SiGe/Si substrate
    Lew, K. L.
    Yoon, S. F.
    Loke, W. K.
    Tanoto, H.
    Dohrman, C. L.
    Isaacson, D. M.
    Fitzgerald, E. A.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (03): : 902 - 905
  • [7] ISOLATED EMITTER ALGAAS GAAS HBT INTEGRATED WITH EMITTER-DOWN HI2L TECHNOLOGY
    PLUMTON, DL
    CHANG, CTM
    WOODS, BO
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (11) : 508 - 510
  • [8] REDUCTION OF EMITTER THICKNESS IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
    TADAYON, S
    TADAYON, B
    TASKER, PJ
    SCHAFF, WJ
    EASTMAN, LF
    ELECTRONICS LETTERS, 1989, 25 (12) : 802 - 803
  • [9] EMITTER REGION DELAY TIME OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    GAO, GB
    CHYI, JI
    CHEN, J
    MORKOC, H
    SOLID-STATE ELECTRONICS, 1990, 33 (03) : 389 - 390
  • [10] A new InGaP/AlGaAs/GaAs composite-emitter heterojunction bipolar transistors
    Tsai, MK
    Wu, YW
    Tan, SW
    Chu, MY
    Chen, WT
    Yang, YJ
    Lour, WS
    COMMAD 2002 PROCEEDINGS, 2002, : 389 - 392
12345