RAMAN MICROPROBE STUDY OF RECRYSTALLIZATION IN ION-IMPLANTED AND LASER-ANNEALED POLYCRYSTALLINE SILICON

被引：27
|
作者：
NAKASHIMA, S [1 ]
INOUE, Y [1 ]
MIYAUCHI, M [1 ]
MITSUISHI, A [1 ]
NISHIMURA, T [1 ]
FUKUMOTO, T [1 ]
AKASAKA, Y [1 ]
机构：
[1] MITSUBISHI ELECT CORP,LSI RES & DEV LAB,ITAMI,HYOGO 664,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期
关键词：
D O I：
10.1063/1.332334
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2611 / 2617
页数：7
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