CHARACTERIZATION OF ION-IMPLANTED AND LASER ANNEALED POLYCRYSTALLINE SI BY A RAMAN MICRO-PROBE

被引：18
|
作者：
NAKASHIMA, S [1 ]
INOUE, Y [1 ]
MIYAUCHI, M [1 ]
MITSUISHI, A [1 ]
NISHIMURA, T [1 ]
FUKUMOTO, T [1 ]
AKASAKA, Y [1 ]
机构：
[1] MITSUBISHI ELECT CORP,LSI,RES & DEV LAB,ITAMI,HYOGO 664,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 06期
关键词：
D O I：
10.1063/1.93576
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：524 / 526
页数：3
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