共 50 条
- [1] A MODEL OF FIELD (TUNNEL) GENERATION OF POSITIVE CHARGE IN THERMAL SILICON DIOXIDE OF SI-SIO2 STRUCTURESPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 92 (02): : 615 - 622MIKHAILOVSKII, IPEPOV, AE
- [2] EFFECTS OF AVALANCHE INJECTION OF ELECTRONS INTO SILICON DIOXIDE - GENERATION OF FAST AND SLOW INTERFACE STATESJOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6231 - 6240LAI, SKYOUNG, DR
- [3] TRAP GENERATION DURING LOW-FLUENCE AVALANCHE-ELECTRON INJECTION IN METAL-OXIDE-SILICON CAPACITORSJOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1326 - 1329HSU, CCHPAN, SCSSAH, CT
- [4] HOT ELECTRON EMISSION FROM SILICON INTO SILICON DIOXIDE BY SURFACE AVALANCHEAPPLIED PHYSICS LETTERS, 1969, 15 (11) : 364 - &POIRIER, ROLIVIER, J
- [5] 2 PATHWAYS OF POSITIVE OXIDE-CHARGE BUILDUP DURING ELECTRON-TUNNELING INTO SILICON DIOXIDE FILMJOURNAL OF APPLIED PHYSICS, 1994, 76 (08) : 4724 - 4727LU, YSAH, CT
- [6] EFFECT OF HOT-ELECTRON INJECTION ON INTERFACE CHARGE-DENSITY AT THE SILICON TO SILICON DIOXIDE INTERFACEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 191 - 194MIURA, YYAMABE, KKOMIYA, YTARUI, Y
- [7] EFFECT OF HOT-ELECTRON INJECTION ON INTERFACE CHARGE-DENSITY AT THE SILICON TO SILICON DIOXIDE INTERFACEJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C338 - C338MIURA, YYAMABE, KKOMIYA, YTARUI, Y
- [8] TUNNEL ELECTRON INDUCED CHARGE GENERATION IN VERY THIN SILICON-OXIDE DIELECTRICSAPPLIED PHYSICS LETTERS, 1991, 58 (23) : 2666 - 2668FARMER, KRANDERSSON, MOENGSTROM, O
- [9] Mechanisms of positive charge generation in buried oxide of UNIBOND and separation by implanted oxygen silicon-on-insulator structures during high-field electron injectionJOURNAL OF APPLIED PHYSICS, 2003, 94 (03) : 1823 - 1832Nazarov, ANKilchytska, VIHouk, YBallutaud, D
- [10] CHARGE STORAGE KINETICS IN MEMORY DEVICES DURING ELECTRON INJECTION FROM SILICONRADIOTEKHNIKA I ELEKTRONIKA, 1987, 32 (08): : 1693 - 1698GURTOV, VAIVASHENKOV, ONRAIKERUS, PA