FORMATION OF DISLOCATION-INDUCED HETEROGENEITY OF COMPOSITION OF GALLIUM-ARSENIDE CRYSTALS

被引：0

作者：

KOVALCHUK, IA

MARKOV, AV

MEZHENNYI, MV

MILVIDSKII, MG

OSVENSKII, VB

机构：

来源：

ZHURNAL TEKHNICHESKOI FIZIKI | 1989年 / 59卷 / 02期

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暂无

中图分类号：

O59 [应用物理学];

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摘要：

引用

页码：106 / 110

页数：5

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[41] PHOTOABSORPTION AND MAGNETO-PHOTOABSORPTION EFFECTS IN GALLIUM-ARSENIDE CRYSTALS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (06): : 632 - 636
[42] DISLOCATION-FREE GALLIUM ARSENIDE - SINGLE CRYSTALS
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, S : 81 - &
[43] PREFERENTIAL PRECIPITATION ON DISLOCATION LOOPS IN TE-DOPED GALLIUM-ARSENIDE
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[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 38 (01): : 15 - 23
[44] EFFECT OF SURFACTANTS ON STRENGTH OF GALLIUM-ARSENIDE SINGLE-CRYSTALS
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) : 282 - 283
[45] RESIDUAL-STRESSES IN GALLIUM-ARSENIDE SINGLE-CRYSTALS
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[J]. INORGANIC MATERIALS, 1990, 26 (02) : 190 - 193
[46] PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE
DEMENET, JL
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[J]. STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, 1989, 104 : 415 - 420
[47] ANOMALOUS DIFFRACTION EFFECTS IN GALLIUM-ARSENIDE SINGLE-CRYSTALS
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COPLEY, SM
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 23 (01): : 123 - 134
[48] IMPURITY VIBRATIONS OF COPPER DEFECT COMPLEXES IN GALLIUM-ARSENIDE CRYSTALS
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (04) : 775 - +
[49] REVERSAL OF X-RAY-DIFFRACTION DISLOCATION CONTRAST IN GALLIUM-ARSENIDE
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[J]. APPLIED PHYSICS LETTERS, 1988, 53 (19) : 1856 - 1858
[50] PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE
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[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (104): : 415 - 420

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