FINE LINE MOS TECHNOLOGY FOR HIGH-SPEED INTEGRATED-CIRCUITS

被引：3
|
作者：
SMITH, GE [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 11期
关键词：
D O I：
10.1109/T-ED.1983.21337
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1564 / 1564
页数：1
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