FINE LINE MOS TECHNOLOGY FOR HIGH-SPEED INTEGRATED-CIRCUITS

被引：3

作者：

SMITH, GE ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 11期

关键词：

D O I：

10.1109/T-ED.1983.21337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1564 / 1564

页数：1

共 50 条

[31] CROSSTALK ANALYSIS OF INTERCONNECTION LINES AND PACKAGES IN HIGH-SPEED INTEGRATED-CIRCUITS
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[33] STATUS AND PERSPECTIVES OF THE VHSIC (VERY HIGH-SPEED INTEGRATED-CIRCUITS) PROGRAM
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[J]. ONDE ELECTRIQUE, 1984, 64 (04): : 87 - 94
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[35] MULTIMETERS AND MOS INTEGRATED-CIRCUITS
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[J]. INTER ELECTRONIQUE, 1972, 27 (75): : 47 - 48
[36] COMPLEMENTARY MOS INTEGRATED-CIRCUITS
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[J]. WIRELESS WORLD, 1973, 79 (1454): : 395 - 400
[37] COUPLING AND CROSSTALK BETWEEN HIGH-SPEED INTERCONNECTS IN ULTRALARGE SCALE INTEGRATED-CIRCUITS
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[38] 1-THZ-BANDWIDTH PROBER FOR HIGH-SPEED DEVICES AND INTEGRATED-CIRCUITS
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[J]. ELECTRONICS LETTERS, 1987, 23 (24) : 1308 - 1310
[39] HIGH-SPEED HIGH-FREQUENCY GALLIUM-ARSENIDE TRANSISTORS FOR INTEGRATED-CIRCUITS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) : C467 - C467
[40] HIGH-SPEED ENHANCEMENT-MODE GAAS-MESFET INTEGRATED-CIRCUITS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 329 - 333

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