ION-IMPLANTATION OF SI AND SE DONORS IN IN0.53GA0.47AS

被引：30
|
作者：
PENNA, T
TELL, B
LIAO, ASH
BRIDGES, TJ
BURKHARDT, G
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期
关键词：
D O I：
10.1063/1.334813
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：351 / 354
页数：4
相关论文
共 50 条
  • [1] ION-IMPLANTATION OF BE IN IN0.53GA0.47AS
    TABATABAIEALAVI, K
    CHOUDHURY, ANMM
    SLATER, NJ
    FONSTAD, CG
    APPLIED PHYSICS LETTERS, 1982, 40 (06) : 517 - 519
  • [2] ION-IMPLANTATION OF SI IN BE-IMPLANTED IN0.53GA0.47AS
    CHOUDHURY, ANMM
    SLATER, NJ
    TABATABAIEALAVI, K
    FONSTAD, CG
    APPLIED PHYSICS LETTERS, 1982, 40 (07) : 607 - 608
  • [3] ION-IMPLANTATION OF SI IN SEMIINSULATING IN0.53GA0.47AS-FE
    RAO, MV
    KRUPPA, W
    ELECTRONICS LETTERS, 1986, 22 (06) : 299 - 301
  • [4] DOPING OF IN0.53GA0.47AS AND IN0.52AL0.48AS BY SI+ AND BE+ ION-IMPLANTATION
    HAILEMARIAM, E
    PEARTON, SJ
    HOBSON, WS
    LUFTMAN, HS
    PERLEY, AP
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) : 215 - 220
  • [5] ELECTRICAL-PROPERTIES OF IN0.53GA0.47AS LAYERS FORMED BY ION-IMPLANTATION AND RAPID THERMAL (FLASH) ANNEAL
    LIU, SG
    NARAYAN, SY
    MAGEE, CW
    WU, CP
    KOLONDRA, F
    PACZKOWSKI, JP
    CAPEWELL, DR
    RCA REVIEW, 1986, 47 (04): : 518 - 535
  • [6] Maximizing electrical activation of ion-implanted Si in In0.53Ga0.47As
    Lind, A. G.
    Rudawski, N. G.
    Vito, N. J.
    Hatem, C.
    Ridgway, M. C.
    Hengstebeck, R.
    Yates, B. R.
    Jones, K. S.
    APPLIED PHYSICS LETTERS, 2013, 103 (23)
  • [7] Electrical activation of ion implanted Si in amorphous and crystalline In0.53Ga0.47As
    Lind, A. G.
    Gill, M. A.
    Hatem, C.
    Jones, K. S.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2014, 337 : 7 - 10
  • [8] LUMINESCENCE IN ION-IMPLANTED IN0.53GA0.47AS
    SHAH, J
    TELL, B
    BRIDGES, TJ
    BURKHARDT, EG
    DIGIOVANNI, AE
    BROWNGOEBELER, K
    APPLIED PHYSICS LETTERS, 1985, 47 (02) : 146 - 148
  • [9] Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As
    Aldridge, Henry, Jr.
    Lind, Aaron G.
    Bomberger, Cory C.
    Puzyrev, Yevgeniy
    Hatem, Christopher
    Gwilliam, Russell M.
    Zide, Joshua M. O.
    Pantelides, Sokrates T.
    Law, Mark E.
    Jones, Kevin S.
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (08) : 4282 - 4287
  • [10] Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As
    Henry Aldridge
    Aaron G. Lind
    Cory C. Bomberger
    Yevgeniy Puzyrev
    Christopher Hatem
    Russell M. Gwilliam
    Joshua M. O. Zide
    Sokrates T. Pantelides
    Mark E. Law
    Kevin S. Jones
    Journal of Electronic Materials, 2016, 45 : 4282 - 4287
12345