HIGH-FREQUENCY CHARACTERISTICS FOR BIPOLAR HETEROTRANSISTORS WITH BASE INTERVALLEY NONEQUILIBRIUM-CARRIER REDISTRIBUTION

被引：0
|
作者：
ZAKHAROVA, AA
机构：
来源：
SOVIET MICROELECTRONICS | 1989年 / 18卷 / 02期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-frequency characteristics have been calculated for bipolar heterotransistors (BHT) having smooth emitter-base heterojunctions and bases made of Si or Ge; allowance is made for the intervalley minority-carrier (electron) redistribution. It is found that carrier disequilibrium in the base due to uneven equivalent-valley population can increase the BHT limiting frequency appreciably.
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页码：94 / 97
页数：4
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