A theory of high-frequency distortion in bipolar transistors

被引：24
|
作者：
Vaidyanathan, M [1 ]
Iwamoto, M
Larson, LE
Gudem, PS
Asbeck, PM
机构：
[1] Univ Calif San Diego, Ctr Wireless Commun, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
[2] IBM Corp, TJ Watson Res Ctr, W Coast Design Ctr Excellence, Encinitas, CA 92024 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2003年 / 51卷 / 02期
关键词：
current cancellation; harmonic distortion; heterojunction and homojunction bipolar transistors; high-frequency distortion; intermodulation distortion; linearity; nonlinear distortion; unity-current-gain frequency; Volterra series;
D O I：
10.1109/TMTT.2002.807821
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-frequency distortion in bipolar transistors is examined by using the charge-control approach of Poon and Narayanan to connect the device's distortion behavior to its "loaded" unity-current-gain frequency ((ω) over cap (T)). The resulting expressions for the distortion reveal considerable information on its frequency and bias dependence. Points on the COT versus collector current curve yielding optimum distortion performance are identified and interpreted in terms of current cancellation. Both second- and third-order distortion are considered, and the results are validated by both simulation and experiment.
引用
收藏
页码：448 / 461
页数：14
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