TEMPERATURE DEPENDENCE OF CARRIER LIFETIMES IN INAS

被引：0
|
作者：
MIKHAILOVA, MP
NASLEDOV, DN
SLOBODCHIKOV, SV
机构：
来源：
SOVIET PHYSICS-SOLID STATE | 1964年 / 5卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1685 / 1689
页数：5
相关论文
共 50 条
  • [41] Temperature dependence of the radiative lifetimes in Ge and Si nanocrystals
    Forero-Martinez, Nancy C.
    Le, Ha-Linh Thi
    Ning, Ning
    Vach, Holger
    Weissker, Hans-Christian
    NANOSCALE, 2015, 7 (11) : 4942 - 4948
  • [42] TEMPERATURE AND PHASE DEPENDENCE OF POSITRON LIFETIMES IN SOLID CYCLOHEXANE
    LIGHTBODY, D
    SHERWOOD, JN
    ELDRUP, M
    CHEMICAL PHYSICS, 1985, 93 (03) : 475 - 484
  • [43] Trap centers and minority carrier lifetimes in InAs/(GaIn)Sb superlattice long wavelength photodetectors
    Yang, QK
    Pfahler, C
    Schmitz, J
    Pletschen, W
    Fuchs, F
    QUANTUM SENSING: EVOLUTION AND REVOLUTION FROM PAST TO FUTURE, 2003, 4999 : 448 - 456
  • [44] Pump dependent carrier lifetimes in InAs/GaAs quantum dot photoconductive terahertz antenna structures
    Gorodetsky, Andrei
    Bazieva, Natalia
    Rafailov, Edik U.
    JOURNAL OF APPLIED PHYSICS, 2019, 125 (15)
  • [45] Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices
    Haugan, H. J.
    Brown, G. J.
    Olson, B. V.
    Kadlec, E. A.
    Kim, J. K.
    Shaner, E. A.
    APPLIED PHYSICS LETTERS, 2015, 107 (13)
  • [46] TEMPERATURE DEPENDENCE OF CARRIER LIFETIME IN SILICON
    SANDIFORD, DJ
    PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (462): : 1002 - 1006
  • [47] TEMPERATURE DEPENDENCE OF RELATIVE EFFICIENCY OF INAS DIODE EMITTERS
    REYNOLDS, RA
    HUTCHINS.WG
    SOLID-STATE ELECTRONICS, 1967, 10 (08) : 875 - &
  • [48] Temperature dependence of photoreflectance in InAs/GaAs quantum dots
    Lai, CM
    Chang, FY
    Chang, CW
    Kao, CH
    Lin, HH
    Jan, GJ
    Lee, J
    APPLIED PHYSICS LETTERS, 2003, 82 (22) : 3895 - 3897
  • [49] Temperature dependence of the energy gap and free carrier absorption in bulk InAs0.05Sb0.95 single crystals
    Bansal, B
    Dixit, VK
    Venkataraman, V
    Bhat, HL
    APPLIED PHYSICS LETTERS, 2003, 82 (26) : 4720 - 4722
  • [50] Temperature dependence of the band overlap in InAs/GaSb structures
    Symons, D. M.
    Lakrimi, M.
    Van der Burgt, M.
    Vaughan, T. A.
    Physical Review B: Condensed Matter, 51 (03):
12345