TEMPERATURE DEPENDENCE OF CARRIER LIFETIMES IN INAS

被引：0
|
作者：
MIKHAILOVA, MP
NASLEDOV, DN
SLOBODCHIKOV, SV
机构：
来源：
SOVIET PHYSICS-SOLID STATE | 1964年 / 5卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：1685 / 1689
页数：5
相关论文
共 50 条
  • [21] Measurement of the temperature dependence of silicon recombination lifetimes
    Johnston, S
    Ahrenkiel, RK
    DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS II, 1998, 510 : 607 - 612
  • [22] Temperature dependence of optical phonon lifetimes in ZnSe
    Anand, S
    Verma, P
    Jain, KP
    Abbi, SC
    PHYSICA B, 1996, 226 (04): : 331 - 337
  • [23] Temperature dependence of exciton lifetimes in quantum wires
    Oberli, DY
    Vouilloz, F
    Kapon, E
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 164 (01): : 353 - 357
  • [24] TEMPERATURE-DEPENDENCE OF POSITRON LIFETIMES IN LIPOSOMES
    MCMAHON, PL
    GRAF, G
    GLASS, JC
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1977, 174 (SEP): : 174 - 174
  • [25] TEMPERATURE-DEPENDENCE OF POSITRON LIFETIMES IN CADMIUM
    SINGH, KP
    WEST, RN
    JOURNAL OF PHYSICS F-METAL PHYSICS, 1976, 6 (10): : L267 - L270
  • [26] TEMPERATURE-DEPENDENCE OF POSITRON LIFETIMES IN MERCURY
    CHU, MY
    JAN, GJ
    TSENG, PK
    HUANG, WF
    PHYSICS LETTERS A, 1973, A 43 (05) : 423 - 424
  • [27] Phonon lifetimes in bulk AlN and their temperature dependence
    Kuball, M
    Hayes, JM
    Shi, Y
    Edgar, JH
    APPLIED PHYSICS LETTERS, 2000, 77 (13) : 1958 - 1960
  • [28] TEMPERATURE AND PRESSURE DEPENDENCE OF PHOSPHORESCENCE LIFETIMES IN PMMA
    RODRIGUE.S
    OFFEN, H
    JOURNAL OF CHEMICAL PHYSICS, 1970, 52 (02): : 586 - &
  • [29] Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices
    Haugan, Heather J.
    Brown, Gail J.
    Olson, Benjamin V.
    Kadlec, Emil A.
    Kim, Jin K.
    Shaner, Eric A.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (02):
  • [30] Dependence of Hooge parameter of InAs heterostructure on temperature
    Tacano, M
    Ando, M
    Shibasaki, I
    Hashiguchi, S
    Sikula, J
    Matsui, T
    MICROELECTRONICS RELIABILITY, 2000, 40 (11) : 1921 - 1924
12345