EPITAXIAL-FILMS OF SEMICONDUCTING FESI2 ON (001) SILICON

被引：169
|
作者：
MAHAN, JE
GEIB, KM
ROBINSON, GY
LONG, RG
YAN, XH
BAI, G
NICOLET, MA
NATHAN, M
机构：
[1] COLORADO RES DEV CORP,DENVER,CO 80293
[2] TEL AVIV UNIV,DEPT ELECTRON DEVICES & MAT & ELECTROMAGNET RADIAT,IL-69978 TEL AVIV,ISRAEL
[3] CALTECH,PASADENA,CA 91125
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 21期
关键词：
D O I：
10.1063/1.103235
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial thin films of the semiconducting transition metal silicide, beta-FeSi2, were grown on (001) silicon wafers. The observed matching face relationship is FeSi2(100)/Si(001), with the azimuthal orientation being FeSi2[010]||Si〈110〉. This heteroepitaxial relationship has a common unit mesh of 59 Å2 area, with a mismatch of 2.1%. There is a strong tendency toward island formation within this heteroepitaxial system.
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页码：2126 / 2128
页数：3
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