TEM INVESTIGATION OF ION-BEAM SYNTHESIZED BURIED FESI2 IN (001) SILICON

被引：0
|
作者：
TAVARES, J [1 ]
BENDER, H [1 ]
LAUWERS, A [1 ]
MAEX, K [1 ]
VANROSSUM, M [1 ]
机构：
[1] UNIV SAO PAULO,LSI LABS,SAO PAULO,BRAZIL
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1993 | 1993年 / 134期
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A continuous buried beta-FeSi2 layer is prepared by Ion Beam Synthesis in (100) silicon. The different epitaxial orientation relationships between the silicide and the silicon matrix are studied by HREM and electron diffraction.
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页码：181 / 184
页数：4
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