TEM INVESTIGATION OF ION-BEAM SYNTHESIZED SEMICONDUCTING FESI2

被引：9
|
作者：
YANG, Z
HOMEWOOD, KP
REESON, KJ
FINNEY, MS
HARRY, MA
机构：
[1] Department of Electrical and Electronic Engineering, University of Surrey, Guildford
来源：
MATERIALS LETTERS | 1995年 / 23卷 / 4-6期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1016/0167-577X(95)00049-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Both as-implanted and annealed semiconducting FeSi2 samples fabricated using ion beam synthesis technique were studied by transmission electron microscopy. A continuous buried silicide layer with larger precipitates and sharper interfaces formed during annealing at 900 degrees C for 18 h. Different orientation relationships between the silicide grains and the silicon substrate were found. The existence of a large variety of parallel lattice plane pairs with the available small mismatches between the two phases results in these preferred orientation relationships.
引用
收藏
页码：215 / 220
页数：6
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