STRAIN AND MISORIENTATION IN GAAS GROWN ON SI(001) BY ORGANOMETALLIC EPITAXY

被引：35
|
作者：
GHANDHI, SK
AYERS, JE
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 13期
关键词：
D O I：
10.1063/1.100020
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1204 / 1206
页数：3
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