共 50 条
- [1] LOW-THRESHOLD GAAS/ALGAAS QUANTUM-WELL LASERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY USING TRIMETHYLAMINE ALANE[J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) : 432 - 435HOBSON, WSVANDERZIEL, JPLEVI, AFJOGORMAN, JABERNATHY, CRGEVA, MLUTHER, LCSWAMINATHAN, V
- [2] ROOM-TEMPERATURE CONTINUOUS OPERATION OF GAAS/ALGAAS LASERS GROWN ON SI BY ORGANOMETALLIC VAPOR-PHASE EPITAXY[J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (04) : 1916 - 1918CHOI, HKWANG, CAFAN, JCC
- [3] ALGAAS/GAAS HBTS GROWN ON INP BY ORGANOMETALLIC VAPOR-PHASE EPITAXY[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (04) : 595 - 597HOBSON, WSREN, FPEARTON, SJFULLOWAN, TRLASKOWSKI, EJCHEN, YK
- [4] GALVANOMAGNETIC EFFECT IN ALGAAS/GAAS HETEROSTRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY[J]. APPLIED PHYSICS LETTERS, 1986, 49 (14) : 865 - 867AINA, LMATTINGLY, MPANDE, K
- [5] MORPHOLOGY OF ALGAAS LAYER GROWN ON GAAS(111)A SUBSTRATE PLANE BY ORGANOMETALLIC VAPOR-PHASE EPITAXY[J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (01) : 313 - 315UMEMURA, MKUWAHARA, KFUKE, SSATO, MIMAI, T
- [6] ROLE OF VANADIUM IN ORGANOMETALLIC VAPOR-PHASE EPITAXY GROWN GAAS[J]. APPLIED PHYSICS LETTERS, 1989, 54 (18) : 1772 - 1774HOBSON, WSPEARTON, SJSWAMINATHAN, VJORDAN, ASKANBER, HKAO, YJHAEGEL, NM
- [7] POSTGROWTH THERMAL ANNEALING OF GAAS ON SI(001) GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY[J]. JOURNAL OF CRYSTAL GROWTH, 1992, 125 (1-2) : 329 - 335AYERS, JESCHOWALTER, LJGHANDHI, SK
- [8] HIGHLY UNIFORM GAAS/ALGAAS GRIN-SCH SQW DIODE-LASERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1989, 1 (11) : 351 - 353WANG, CACHOI, HKCONNORS, MK
- [9] CHARACTERIZATION OF INP/GAAS EPILAYERS GROWN ON SI SUBSTRATES BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY[J]. APPLIED PHYSICS LETTERS, 1988, 52 (11) : 880 - 882LEE, MKWUU, DSTUNG, HHYU, KYHUANG, KC
- [10] Kinetics of dopant incorporation in GaAs grown by organometallic vapor-phase epitaxy[J]. JOURNAL OF CRYSTAL GROWTH, 2007, 300 (02) : 284 - 287Morrow, Richard A.