LOW-THRESHOLD GAAS/ALGAAS LASERS GROWN ON SI BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：13
|
作者：
CHOI, HK
LEE, JW
SALERNO, JP
CONNORS, MK
TSAUR, BY
FAN, JCC
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 14期
关键词：
D O I：
10.1063/1.99178
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1114 / 1115
页数：2
相关论文
共 50 条
  • [21] OXYGEN INCORPORATION, PHOTOLUMINESCENCE, AND LASER PERFORMANCE OF ALGAAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    SCHWARTZ, BD
    SETZKO, RS
    MOTT, JS
    MACOMBER, SH
    POWERS, JJ
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1687 - 1690
  • [22] CALCULATION OF NATIVE DEFECT CONCENTRATIONS IN GAAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    ICHIMURA, M
    WADA, T
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 479 - 483
  • [23] HIGH-PURITY INP GROWN ON SI BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    AINA, O
    MATTINGLY, M
    BATES, JR
    COGGINS, A
    OCONNOR, J
    SHASTRY, SK
    SALERNO, JP
    DAVIS, A
    LORENZO, JP
    JONES, KS
    APPLIED PHYSICS LETTERS, 1991, 58 (14) : 1554 - 1556
  • [24] PHOTOLUMINESCENCE OF GAAS GROWN BY VAPOR-PHASE EPITAXY
    OZEKI, M
    RYUZAN, O
    DAZAI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (07) : 1049 - &
  • [25] ORGANOMETALLIC VAPOR-PHASE EPITAXY OF COGA ON (100)GAAS
    MAURY, F
    TALIN, AA
    KAESZ, HD
    WILLIAMS, RS
    APPLIED PHYSICS LETTERS, 1992, 61 (09) : 1075 - 1077
  • [26] Low-threshold and high-temperature characteristics of 1.3-μ m InGaAlAs MQW lasers grown by metalorganic vapor-phase epitaxy
    Tsuchiya, T
    Takemoto, D
    Sudou, T
    Aoki, M
    2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 266 - 269
  • [27] INASSBBI ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    HUANG, KT
    CHIU, CT
    COHEN, RM
    STRINGFELLOW, GB
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (06) : 2857 - 2863
  • [28] SURFACE-EMITTING, DISTRIBUTED FEEDBACK INGAAS ALGAAS LASERS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    BOUR, DP
    CARLSON, NW
    EVANS, GA
    LIEW, SK
    KIRK, JB
    REICHERT, WF
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) : 4687 - 4693
  • [29] INASBI ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    HUANG, KT
    CHIU, CT
    COHEN, RM
    STRINGFELLOW, GB
    JOURNAL OF CRYSTAL GROWTH, 1993, 134 (1-2) : 29 - 34
  • [30] ALGAAS/GAAS DOUBLE-HETEROJUNCTION HIGH ELECTRON-MOBILITY TRANSISTORS GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY
    HUANG, RT
    TU, YY
    KASEMSET, D
    NOURI, N
    COLVARD, C
    ACKLEY, D
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) : 550 - 552
12345