DEEP-LEVEL TRANSIENT SPECTROSCOPY OF PLASTICALLY-BENT EPITAXIAL GAAS

被引：9
|
作者：
KADOTA, Y
CHINO, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 10期
关键词：
D O I：
10.1143/JJAP.22.1563
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1563 / 1566
页数：4
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