INTERBAND-TRANSITIONS IN INXGA1-XAS/GAAS STRAINED LAYER SUPERLATTICES

被引:19
|
作者
REDDY, UK
JI, G
HENDERSON, T
HUANG, D
HOUDRE, R
MORKOC, H
LITTON, CW
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] USAF,WRIGHT AERONAUT LABS,AADR,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
来源
关键词
D O I
10.1116/1.584559
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1106 / 1110
页数:5
相关论文
共 50 条
  • [31] Interfacial microstructure of InxGa1-xAs/GaAs strained layers
    Yao, J.Y.
    Andersson, T.G.
    Dunlop, G.L.
    Materials Science Forum, 1995, 189-190 : 285 - 290
  • [32] EXCITONIC TRANSITIONS IN STRAINED-LAYER INXGA1-XAS/INP QUANTUM WELLS
    GERSHONI, D
    TEMKIN, H
    PANISH, MB
    HAMM, RA
    PHYSICAL REVIEW B, 1989, 39 (08): : 5531 - 5534
  • [33] A STUDY OF LAYER THICKNESS AND INTERFACE QUALITIES OF STRAINED INXGA1-XAS/GAAS LAYERS
    HSU, WC
    CHANG, SZ
    WEI, L
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (01): : 26 - 29
  • [34] VALENCE BAND OFFSETS OF THE INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICE
    SHIRAISHI, K
    OHNO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (04): : L556 - L558
  • [35] GROWTH PHENOMENA AND CHARACTERISTICS OF STRAINED INXGA1-XAS ON GAAS
    PAMULAPATI, J
    BERGER, P
    CHANG, K
    OH, J
    CHEN, Y
    SINGH, J
    BHATTACHARYA, P
    GIBALA, R
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 193 - 196
  • [36] ELECTRONIC-ENERGY LEVELS IN INXGA1-XAS/INP STRAINED-LAYER SUPERLATTICES
    GERSHONI, D
    VANDENBERG, JM
    HAMM, RA
    TEMKIN, H
    PANISH, MB
    PHYSICAL REVIEW B, 1987, 36 (02): : 1320 - 1323
  • [37] MINIBAND STRUCTURE IN INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES
    PULSFORD, NJ
    NICHOLAS, RJ
    WARBURTON, RJ
    DUGGAN, G
    MOORE, KJ
    WOODBRIDGE, K
    ROBERTS, C
    PHYSICAL REVIEW B, 1991, 43 (03): : 2246 - 2254
  • [38] CONDUCTION-BAND DISCONTINUITIES OF STRAINED AND UNSTRAINED LAYER INXGA1-XAS/GAAS AND INXGA1-XAS/INP HETEROJUNCTIONS AND QUANTUM-WELLS
    HRIVNAK, L
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1991, 124 (02): : K111 - K116
  • [39] Heavily carbon doped p-type GaAs/InxGa1-xAs strained-layer superlattices grown by MOMBE
    Qi, Ming
    Luo, Jinsheng
    Shirakashi, J.
    Yamada, T.
    Nozaki, S.
    Tadahashi, K.
    Kashima, H.
    Tokumitsu, E.
    Konagai, M.
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1993, 14 (08): : 462 - 467
  • [40] CHARACTERIZATION OF INXGA1-XAS/GAAS STRAINED LAYER SUPERLATTICES BY ION BACKSCATTERING-CHANNELING AND X-RAY-DIFFRACTION
    FLAGMEYER, R
    LENKEIT, K
    BAUMBACH, T
    KANTER, YO
    FEDOROV, AA
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 107 (01): : K19 - K24