INTERBAND-TRANSITIONS IN INXGA1-XAS/GAAS STRAINED LAYER SUPERLATTICES

被引:19
|
作者
REDDY, UK
JI, G
HENDERSON, T
HUANG, D
HOUDRE, R
MORKOC, H
LITTON, CW
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] USAF,WRIGHT AERONAUT LABS,AADR,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
来源
关键词
D O I
10.1116/1.584559
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1106 / 1110
页数:5
相关论文
共 50 条
  • [21] PHOTOLUMINESCENCE OF INXGA1-XAS-GAAS STRAINED-LAYER SUPERLATTICES
    ANDERSON, NG
    LAIDIG, WD
    LIN, YF
    JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (02) : 187 - 202
  • [22] Growth and characterization of In0.53As/InxGa1-xAs strained-layer superlattices
    Kohl, A., 1600, Publ by Elsevier Sequoia SA, Lausanne, Switzerland (B21): : 2 - 3
  • [23] INTERBAND-TRANSITIONS OF THIN-LAYER GAAS/ALAS SUPERLATTICES
    GARRIGA, M
    CARDONA, M
    CHRISTENSEN, NE
    LAUTENSCHLAGER, P
    ISU, T
    PLOOG, K
    PHYSICAL REVIEW B, 1987, 36 (06): : 3254 - 3258
  • [24] RAMAN-SCATTERING STUDY OF FOLDED ACOUSTIC PHONONS IN GAAS/INXGA1-XAS STRAINED-LAYER SUPERLATTICES
    LOCKWOOD, DJ
    DHARMAWARDANA, MWC
    MOORE, WT
    DEVINE, RLS
    APPLIED PHYSICS LETTERS, 1987, 51 (05) : 361 - 363
  • [25] MICROSTRUCTURES AND CRITICAL THICKNESSES OF INXGA1-XAS GAAS STRAINED-LAYER STRUCTURES
    YAO, JY
    ANDERSSON, TG
    DUNLOP, GL
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 1086 - 1095
  • [26] ANOMALIES IN THE PRESSURE RESPONSE OF THE RAMAN MODES IN (211)-ORIENTED INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
    LEMOS, V
    RITTER, T
    WEINSTEIN, BA
    APPLIED PHYSICS LETTERS, 1992, 61 (12) : 1417 - 1419
  • [27] MBE growth of strained InxGa1-xAs on GaAs(001)
    Nemcsics, A
    Olde, J
    Geyer, M
    Schnurpfeil, R
    Manzke, R
    Skibowski, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1996, 155 (02): : 427 - 437
  • [28] THE INTERFACIAL MORPHOLOGY OF STRAINED EPITAXIAL INXGA1-XAS/GAAS
    YAO, JY
    ANDERSSON, TG
    DUNLOP, GL
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2224 - 2230
  • [29] INTERFACIAL MICROSTRUCTURE OF INXGA1-XAS/GAAS STRAINED LAYERS
    YAO, JY
    ANDERSSON, TG
    DUNLOP, GL
    INTERFACES II, 1995, 189- : 285 - 290
  • [30] OPTICAL STUDIES OF INXGA1-XAS/GAAS STRAINED-LAYER QUANTUM WELLS
    HUANG, KF
    TAI, K
    CHU, SNG
    CHO, AY
    APPLIED PHYSICS LETTERS, 1989, 54 (20) : 2026 - 2028