CMOS VLSI SINGLE EVENT TRANSIENT CHARACTERIZATION

被引：16
|
作者：
HEILEMAN, SJ [1 ]
EISENSTADT, WR [1 ]
FOX, RM [1 ]
WAGNER, RS [1 ]
BORDES, N [1 ]
BRADLEY, JM [1 ]
机构：
[1] UNIV CALIF LOS ALAMOS SCI LAB,LOS ALAMOS,NM 87544
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期
关键词：
D O I：
10.1109/23.45437
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2287 / 2291
页数：5
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