INTEGRABLE INGAAS/GAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：4
|
作者：
THIBEAULT, BJ
SCOTT, JW
PETERS, MG
PETERS, FH
YOUNG, DB
COLDREN, LA
机构：
[1] Department of Electrical and Computer Engineering, University of California at Santa Barbara, Santa Barbara
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 25期
关键词：
VERTICAL CAVITY SURFACE EMITTING LASERS; LASERS;
D O I：
10.1049/el:19931476
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new electrically isolated bottom-emission vertical-cavity surface-emitting laser structure with a novel contacting method is demonstrated. The structure is grown on semi-insulating material and contacts are made to an n-type intracavity contact layer and the top of a low-resistance Al0.67Ga0.33As/GaAs p-type distributed Bragg reflector. This structure offers the advantages of device isolation and low parasitic capacitance without sacrificing performance. Small devices (10mum or less in diameter) perform as well as the best lasers reported in the literature.
引用
收藏
页码：2197 / 2199
页数：3
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