REDUCED THRESHOLD VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：20
|
作者：
YOUNG, DB [1 ]
KAPILA, A [1 ]
SCOTT, JW [1 ]
MALHOTRA, V [1 ]
COLDREN, LA [1 ]
机构：
[1] UNIV HAWAII MANOA,DEPT ELECT ENGN,OPTOELECTR RES LAB,HONOLULU,HI 96822
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 03期
关键词：
VERTICAL-CAVITY SURFACE-EMITTING LASERS; PASSIVATION;
D O I：
10.1049/el:19940141
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Etched-pillar vertical-cavity surface-emitting laser structures have been fabricated incorporating sidewall sulphide passivation to reduce the surface recombination velocity at the exposed quantum well edges. The passivated devices exhibit a 25% reduction in surface recombination velocity and a minimum 0.67 mA threshold current.
引用
收藏
页码：233 / 235
页数：3
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