OPTICALLY DETECTED MAGNETIC-RESONANCE INVESTIGATION OF A GALLIUM VACANCY-RELATED DEFECT IN ELECTRON-IRRADIATED GALLIUM-ARSENIDE

被引：5
|
作者：
KRAMBROCK, K [1 ]
SPAETH, JM [1 ]
机构：
[1] UNIV GESAMTHSCH PADERBORN,FACHBEREICH PHYS,D-33098 PADERBORN,GERMANY
来源：
SOLID STATE COMMUNICATIONS | 1995年 / 93卷 / 04期
关键词：
SEMICONDUCTORS; POINT DEFECTS; OPTICAL PROPERTIES; ELECTRON PARAMAGNETIC RESONANCE;
D O I：
10.1016/0038-1098(94)00776-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In different types of GaAs (p-type ai-id semi-insulating) electron-irradiated at 4.2 K and kept below 80 K, a dominant defect with a quartet hyperfine split spectrum was observed with optically detected electron paramagnetic resonance. The defect is attributed to a Gallium vacancy-related defect. It decays at about room temperature while an As antisite-related defect, identified previously as an anti-structure pair, As-Ga with Ga-As as a second nearest neighbour (nnn), is formed. The spectrum of the magnetic circular dichroism of the Ga vacancy-related defect is interpreted to originate from photo-ionisation transitions to the valence band.
引用
收藏
页码：285 / 289
页数：5
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