共 50 条
- [1] PROPERTIES OF GALLIUM-ARSENIDE DOPED BY REACTOR NEUTRON-IRRADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (03): : 319 - 321
- [2] EFFECT OF NEUTRON-IRRADIATION ON DIFFUSION OF ZINC IN INDIUM ARSENIDE AND GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (07): : 1173 - +
- [3] DOPING OF GALLIUM-ARSENIDE BY NEUTRON-IRRADIATION AT HIGH-TEMPERATURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (06): : 646 - 649
- [5] ON THE ALPHA-PARTICLE IRRADIATION INDUCED DEFECTS IN GALLIUM-ARSENIDE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1992, 131 (01): : K1 - K5
- [7] ELECTRON PARAMAGNETIC RESONANCE OF MANGANESE IN GALLIUM ARSENIDE PHYSICAL REVIEW, 1962, 128 (04): : 1568 - +
- [8] ELECTRON PARAMAGNETIC RESONANCE OF IRON IN GALLIUM ARSENIDE PHYSICAL REVIEW, 1963, 132 (01): : 195 - &
- [9] EFFECT OF ELECTRON-IRRADIATION ON THE RECONSTRUCTION OF THE RADIATION DEFECTS IN GALLIUM-ARSENIDE DIODE STRUCTURES DOPOVIDI AKADEMII NAUK UKRAINSKOI RSR SERIYA A-FIZIKO-MATEMATICHNI TA TECHNICHNI NAUKI, 1985, (09): : 53 - 56