PROPERTIES OF GAAS IMPLANTED WITH BE AND MG AFTER CONTROLLED-ATMOSPHERE FURNACE AND RAPID THERMAL ANNEALING

被引：0

作者：

KANBER, H

WHELAN, JM

机构：

[1] HUGHES AIRCRAFT CO,TORRANCE RES CTR,TORRANCE,CA 90509

[2] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 09期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C579 / C579

页数：1

共 50 条

[1] COMPARISON OF RAPID THERMAL ANNEALING AND CONTROLLED-ATMOSPHERE ANNEALING OF ION-IMPLANTED GAAS
KANBER, H
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 24-5 : 575 - 580
[2] A COMPARISON OF RAPID THERMAL ANNEALING AND CONTROLLED-ATMOSPHERE ANNEALING OF SI-IMPLANTED GAAS
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CIPOLLI, RJ
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[3] COMPARISON OF RAPID THERMAL ANNEALING AND CONTROLLED ATMOSPHERE ANNEALING OF ION IMPLANTED GaAs.
Kanber, H.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B24-25 (pt 1 Apr III) : 575 - 580
[4] ROLE OF SULFUR IN THE ANNEALING OF GAAS IN A CONTROLLED-ATMOSPHERE
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PINARD, P
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[5] CONTROLLED-ATMOSPHERE ELECTRIC FURNACE
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[6] ELECTRICAL ACTIVATION OF IMPLANTED BE, MG, ZN, AND CD IN GAAS BY RAPID THERMAL ANNEALING
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[7] ANNEALING OF ION-IMPLANTED GAAS IN A CONTROLLED ATMOSPHERE
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (09) : 1413 - 1415
[8] RAPID THERMAL ANNEALING OF SI IMPLANTED GAAS
CHAN, YJ
LIN, MS
JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (01) : 31 - 36
[9] RAPID THERMAL ANNEALING OF SI IMPLANTED GAAS
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[10] BRIGHT ANNEALING BRASS IN CONTROLLED-ATMOSPHERE
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