共 50 条
- [41] ELECTRICAL-PROPERTIES OF RAPID THERMAL ANNEALED IMPLANTED GAAS EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 193 - 195
- [44] Process Optimization of Multicycle Rapid Thermal Annealing of Mg-implanted GaN 2014 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2014, : 58 - 61
- [45] RAPID THERMAL ANNEALING OF MG+ AND P+ DUALLY IMPLANTED INP NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 798 - 801
- [46] EXAMINATION OF EXTRA-SOFT SHEET-STEEL SURFACES AFTER ANNEALING IN A CONTROLLED-ATMOSPHERE JOURNAL DE MICROSCOPIE ET DE SPECTROSCOPIE ELECTRONIQUES, 1987, 12 (03): : A8 - A8
- [47] Transmission line measurement of gold contact on the arsenic-ion-implanted GaAs after rapid thermal annealing ADVANCED MICROELECTRONIC PROCESSING TECHNIQUES, 2000, 4227 : 29 - 34
- [49] RAPID THERMAL ANNEALING AND PROPERTIES OF B-IMPLANTED AND P-IMPLANTED SILICON EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 271 - 273
- [50] Ion implanted GaN MISFETs fabricated in Mg implanted layers activated by conventional rapid thermal annealing NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 449 : 49 - 53